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  data sheet no. pd60029 revj self-oscillating half-bridge driver product summary v offset 600v max. duty cycle 50% i o +/- 210 ma / 420 ma v out 10 - 20v deadtime (typ.) 1.2  s package typical connection www.irf.com 1 mosfet or igbt in the high side configuration that operates off a high voltage rail up to 600 volts. 8 lead pdip up to 600v v cc v b v s ho lo com r t c t to load (refer to lead assignment diagram for correct pin configuration) description the ir2155 is a high voltage, high speed, self- oscillating power mosfet and igbt driver with both high and low side referenced output channels. pro- prietary hvic and latch immune cmos technolo- gies enable ruggedized monolithic construction. the front end features a programmable oscillator which is similar to the 555 timer. the output drivers feature a high pulse current buffer stage and an in- ternal deadtime designed for minimum driver cross- conduction. propagation delays for the two channels are matched to simplify use in 50% duty cycle applications. the floating channel can be used to drive an n-channel power features ? floating channel designed for bootstrap opera tion fully operational to +600v tolerant to negative transient voltage dv/dt immune ? undervoltage lockout ? programmable oscillator frequency f = + 1 1.4 (r 150 ) c tt ? ? matched propagation delay for both channels ? micropower supply startup current of 125  a typ. ? low side output in phase with r t ? available in lead-free ir2155&(pbf) (note: for new designs, we recommend ir?s new products ir2153 and ir21531)
ir2155&(pbf) 2 www.irf.com parameter value symbol definition min. max. units v b high side floating supply absolute voltage v s + 10 v s + 20 v s high side floating supply offset voltage ? 600 v ho high side floating output voltage v s v b v lo low side output voltage 0 v cc i cc supply current (note 1) ? 5 ma t a ambient temperature -40 125  c parameter value symbol definition min. max. units v b high side floating supply voltage -0.3 625 v s high side floating supply offset voltage v b - 25 v b + 0.3 v ho high side floating output voltage v s - 0.3 v b + 0.3 v lo low side output voltage -0.3 v cc + 0.3 v rt r t voltage -0.3 v cc + 0.3 v ct c t voltage -0.3 v cc + 0.3 i cc supply current (note 1) ? 25 i rt r t output current -5 5 dv s /dt allowable offset supply voltage transient ? 50 v/ns p d package power dissipation @ t a d +25  c (8 lead dip) ? 1.0 (8 lead soic) ? 0.625 r t ja thermal resistance, junction to ambient (8 lead dip) ? 125 (8 lead soic) ? 200 t j junction temperature ? 150 t s storage temperature -55 150  c t l lead temperature (soldering, 10 seconds) ? 300 absolute maximum ratings absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. all voltage param- eters are absolute voltages referenced to com. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. recommended operating conditions the input/output logic timing diagram is shown in figure 1. for proper operation the device should be used within the recommended conditions. the v s offset rating is tested with all supplies biased at 15v differential. v  c/w w ma v structure between the chip v cc and com which has a nominal breakdown voltage of 15.6v. therefore, the ic supply voltage is normally derived by forcing current into the supply lead (typically by means of a high value resistor connected between the chip v cc and the rectified line voltage and a local decoupling capacitor from v cc to com) and allowing the internal zener clamp circuit to determine the nominal supply voltage. there- fore, this circuit should not be driven by a dc, low impedance power source of greater than v clamp . note 1: because of the ir2155?s application specificity toward off-line supply systems, this ic contains a zener clamp
ir2155&(pbf) www.irf.com 3 parameter value symbol definition min. typ. max. units test conditions f osc oscillator frequency 19.4 20.0 20.6 r t = 35.7 k : 94 100 106 r t = 7.04 k : v clamp v cc zener shunt clamp voltage 14.4 15.6 16.8 i cc = 5 ma v ct+ 2/3 v cc threshold 7.8 8.0 8.2 v v ct- 1/3 v cc threshold 3.8 4.0 4.2 v ctuv c t undervoltage lockout ? 20 50 2.5v < v cc < v ccuv v rt+ r t high level output voltage, v cc - r t ? 0 100 i rt = -100  a ? 200 300 i rt = -1 ma v rt- r t low level output voltage ? 20 50 i rt = 100  a ? 200 300 i rt = 1 ma v rtuv rt undervoltage lockout, v cc - r t ? 0 100 2.5v < v cc < v ccuv v oh high level output voltage, v bias - v o ? ? 100 i o = 0a v ol low level output voltage, v o ? ? 100 i o = 0a i lk offset supply leakage current ? ? 50 v b = v s = 600v i qbs quiescent v bs supply current ? 70 150 i qbsuv micropower v bs supply startup current ? 55 125 i qcc quiescent v cc supply current ? 500 1000 i qccuv micropower v cc supply startup current ? 70 150 i ct c t input current ? 0.001 1.0 v bsuv+ v bs supply undervoltage positive going 7.7 8.4 9.2 threshold v bsuv- v bs supply undervoltage negative going 7.3 8.1 8.9 threshold v bsuvh v bs supply undervoltage lockout hysteresis 100 400 ? mv v ccuv+ v cc supply undervoltage positive going 7.7 8.4 9.2 threshold v ccuv- v cc supply undervoltage negative going 7.4 8.1 8.9 threshold v ccuvh v cc supply undervoltage lockout hysteresis 200 400 ? mv i o+ output high short circuit pulsed current 210 250 ? v o = 0v i o- output low short circuit pulsed current 420 500 ? v o = 15v parameter value symbol definition min. typ. max. units test conditions t r turn-on rise time ? 80 120 t r turn-off fall time ? 40 70 dt deadtime 0.50 1.20 2.25  s dr t duty cycle 48 50 52 % dynamic electrical characteristics v bias (v cc , v bs ) = 12v, c l = 1000 pf and t a = 25  c unless otherwise specified. static electrical characteristics v bias (v cc , v bs ) = 12v, c l = 1000 pf, c t = 1 nf and t a = 25  c unless otherwise specified. the v in , v th and i in parameters are referenced to com. the v o and i o parameters are referenced to com and are applicable to the respective output leads: ho or lo. ns khz mv  a v v ma
ir2155&(pbf) 4 www.irf.com lead definitions lead symbol description r t oscillator timing resistor input,in phase with lo for normal ic operation c t oscillator timing capacitor input, the oscillator frequency according to the following equation: f u u 1 1.4 (r 150 ) c tt : where 150 : is the effective impedance of the r t output stage v b high side floating supply ho high side gate drive output v s high side floating supply return v cc low side and logic fixed supply lo low side gate drive output com low side return functional block diagram lead assignments 8 lead dip ir2155 v b pulse gen delay hv level shift v cc pulse filter dead time lo ho v s com r s q 15.6v c t r t uv detect + - + - rq sq r r r dead time uv detect r
ir2155&(pbf) www.irf.com 5 8 lead pdip 01-3003 01
ir2155&(pbf) 6 www.irf.com figure 1. input/output timing diagram figure 2. switching time waveform definitions figure 3. deadtime waveform definitions ho v cc v clamp v ccuv + r t c t lo r t (lo) t r t f lo ho 50% 50% 90% 90% 10% 10% r t (ho) r t ho 50% 50% 90% 10% lo 90% 10% dt
ir2155&(pbf) www.irf.com 7 this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/08/04 basic part (non-lead free) lead-free part 8-lead pdip ir2155 order ir2155 8-lead pdip ir2155 order IR2155PBF order information


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